DatasheetsPDF.com

MTE010N10FP

Cystech Electonics
Part Number MTE010N10FP
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8 N-Channel Enhance...
Datasheet PDF File MTE010N10FP PDF File

MTE010N10FP
MTE010N10FP

Overview
CYStech Electronics Corp.
Spec.
No.
: C944FP Issued Date : 2014.
01.
14 Revised Date : Page No.
: 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE010N10FP BVDSS ID @ VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 35A 9.
9mΩ 10.
5mΩ Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol MTE010N10FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE010N10FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE010N10FP CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C944FP Issued Date : 2014.
01.
14 Revised Date : Page No.
: 2/ 8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Avalanche Current Avalanche Energy @ L=500μH, ID=30A, RG=25Ω Repetitive Avalanche Energy@ L=0.
1mH Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 3) (Note 2) (Note 2) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) Symbol VDS VGS ID IDM IDSM IAS EAS EAR PD PDSM Tj, Tstg Limits 100 ±20 35 25 140 9 7 80 225 20 37.
5 18.
7 2.
1 1.
3 -55~+175 Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1) Thermal Resistance, Junction-to-ambient, max (Note 1) Symbol Rth,j-c Rth,j-a...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)