Part Number
|
MTE010N10F3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Sep 4, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9
N-Chann...
|
Datasheet
|
MTE010N10F3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C944F3 Issued Date : 2014.
06.
09 Revised Date : 2015.
09.
04 Page No.
: 1/9
N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit)
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
Features
• Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package
100V
70A 9.
6mΩ 10.
1mΩ
Symbol
MTE010N10F3
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTE010N10F3-0-T7-X
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant pro...
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