SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX10
• High Current Capability.
• Hermetic TO3 Metal package.
• Designed For Switching and Linear Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
160V
VCEX
Collector – Emitter Voltage VBE = -1.
5V
160V
VCEO
Collector – Emitter Voltage
125V
VEBO
Emitter – Base Voltage
7V
IC Continuous Collector Current
25A
ICM Peak Collector Current
tp = 10ms
30A
IB Base Current
5A
PD Total Power Dissipation at TC = 25°C
150W
Derate Above 25°C
0.
85W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIE...