MJE2955T (
PNP), MJE3055T (
NPN)
Complementary Silicon Plastic Power
Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
• High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCB
VEB
IC IB
PD (Note 1)
60 70 5.
0 10 6.
0
75 0.
6
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may...