DatasheetsPDF.com

MJE3055

DIGITRON
Part Number MJE3055
Manufacturer DIGITRON
Description NPN SILICON POWER TRANSISTOR
Published Sep 9, 2020
Detailed Description MJE3055 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER TRANSISTOR FEATURES ...
Datasheet PDF File MJE3055 PDF File

MJE3055
MJE3055

Overview
MJE3055 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level.
Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Characteristic Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector-current - continuous Base-current – continuous Total device dissipation Derate above 25°C Operating and storage junction temperature range Thermal resistance, junction to case Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg RѲJC MJE3055 60 70 5 10 6.
0 90 0.
718 -55 to +150 1.
39 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Max ON CHARACTERISTICS Collector-emitter sustaining voltage (1) IC = 200mA, IB = 0 VCEO(sus) 60 - Collector cutoff current VCE = 30V, IB = 0 ICBO - 700 Collector cutoff current VCE = 70V, VEB(off) = 1.
5V VCE = 70V, VEB(off) = 1.
5V, TC = 150°C ICEX - 1.
0 - 5.
0 Collector cutoff current VCE = 70V, IE = 0 VCE = 70V, IE = 0, TC = 150°C ICBO - 1.
0 - 10 Emitter cutoff current VEB = 5V, IC = 0 IEBO - 5.
0 OFF CHARACTERISTICS DC current gain (1) IC = 4A, VCE = 4V IC = 10A, VCE = 4V Collector-emitter saturation voltage (1) IC = 4A, IB = 0.
4A IC = 10A, IB = 3.
3A hFE 20 70 5.
0 - VCE(sat) - 1.
1 - 8.
0 DYNAMIC CHARACTERISTCS Current gain bandwidth product IC = 500mA, VCE = 10V, f = 500kHz Note 1: Pulse test: tp ≤ 300µs, duty cycle ≤ 2.
0%.
fT 2.
0 - Unit V V V A A W W/°C °C °C/W Unit V µA mA mA mA - V MHz Rev.
20150615 High-reliability discrete products and engineering services since 1977 MECHANICAL CHARACTERISTICS Case TO-127 (ECB) Marking Alpha-numeric Pin out See below MJE3055 NPN SILICON POWER TRANSISTOR TO-127 (ECB) Inches Millimeters Min Max Min Max A 0.
635 0.
645 16.
130 16.
380 B 0.
495 0.
505 12.
570 12.
830 C 0.
125 0.
135 3.
180 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)