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MJE3055AT

Inchange Semiconductor
Part Number MJE3055AT
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 11, 2016
Detailed Description isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Hi...
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MJE3055AT
MJE3055AT

Overview
isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
67 ℃/W isc Website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE3055AT ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5uA; IB= 0 V(BR)EBO Emitter -Base Breakdown Voltage IE= 50uA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.
3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 4A ; VCE= 4V hFE-3 Is/b fT DC Current Gain IC= 10A ; VCE= 4V Second Breakdown Collector Current with Base Forward Biased VCE= 37V,t= 0.
5s,Nonrepetitive Current Gain-Bandwidth Product IC= 0.
5A; VCE= 10V; f= 500kHz MIN TYP.
MAX UNIT 80 V 100 V 6 V 1.
1 V 8.
0 V 1.
8 V 0.
7 mA 10 uA 10 uA 150 260 20 100 5 2.
0 A 2.
...


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