isc Silicon
NPN Power
Transistor
DESCRIPTION ·High speed.
·High breakdown voltage(VCBO=1500V).
·High reliability(Adoption of HVP process).
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Color TV Horizontal Deflection
Output Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
25
A
IB
Base Current-Continuous
3.
5
A
Total Power Dissipation @TC=25℃
35
PT
W
Total Power Dissipation @Ta=25℃
2.
0
TJ
Junction Temper...