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2SD2606

Panasonic
Part Number 2SD2606
Manufacturer Panasonic
Description SILICON NPN DIFFUSED TYPE TRANSISTOR
Published Jul 6, 2016
Detailed Description Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington For power amplification Unit: mm s Features q...
Datasheet PDF File 2SD2606 PDF File

2SD2606
2SD2606

Overview
Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington For power amplification Unit: mm s Features q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 500 400 12 14 7 50 1.
4 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 10.
5±0.
3 2.
54±0.
3 1.
4±0.
1 0.
8±0.
1 2.
54±0.
3 123 Internal Connection B s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ Collector cutoff current ICBO VCB = 500V, IE = 0 ICEO VCE = 400V, IE = 0 Emitter cutoff current IEBO VEB = 12V, IC = 0 Collector to emitter voltage VCEO(sus)* IC = 100mA, RBE = ∞ 400 Forward current transfer ratio hFE1 hFE2 VCE = 2V, IC = 2A VCE = 2V, IC = 6A 500 200 Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 70mA Base to emitter saturation voltage VBE(sat) IC = 7A, IB = 70mA Transition frequency fT VCE = 10V, IC = 0.
5A, f = 1MHz 20 Turn-on time Storage time Fall time ton tstg IC = 7A, IB1 = 70mA, IB2 = –70mA, tf VCC = 300V 1.
5 5.
0 6.
5 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 70 *VCEO(sus) Test circuit 50/60Hz mercury relay 120Ω 5V 1Ω X L 10mH Y 15V G 3.
0±0.
5 10.
1±0.
3 1.
5 1.
4 0.
5±0.
1 1.
5±0.
3 4.
6±0.
2 1.
4±0.
1 2.
5±0.
2 0.
1+–00.
3 1:Base 2:Collector 3:Emitter TO–220 Package(c) C E max Unit 100 µA 100 µA 100 mA V 2.
0 V 2.
5 V MHz µs µs µs pF 1 Collector power dissipation PC (W) Collector current IC (A) Power Transistors 60 (1) 50 40 30 PC — Ta (1) TC=Ta (2) With a 100 ×...


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