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2SD2621

Panasonic Semiconductor
Part Number 2SD2621
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Transistor
Published Apr 18, 2011
Detailed Description Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification 0.33+0.05 –0.02 Unit: mm ...
Datasheet PDF File 2SD2621 PDF File

2SD2621
2SD2621

Overview
Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification 0.
33+0.
05 –0.
02 Unit: mm 0.
10+0.
05 –0.
02 ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO 3 0.
15 min.
0.
80±0.
05 1.
20±0.
05 (0.
40) (0.
40) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 100 100 15 20 50 100 125 −55 to +125 Unit V V V mA mA mW °C °C 1 : Base 2 : Emitter 3 : Collector 5˚ 0.
80±0.
05 1.
20±0.
05 0.
15 min.
0.
23+0.
05 –0.
02 1 2 0 to 0.
01 0.
52±0.
03 5˚ SSSMini3-F1 Package Marking Symbol: 3B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT NV Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 60 V, IE = 0 VCE = 60 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = −2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 400 0.
05 200 80 Min 100 100 15 0.
1 1.
0 1 200 0.
20 Typ Max Unit V V V µA µA  V MHz mV Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
www.
DataSheet4U.
com 0.
15 max.
Publication date: June 2004 SJC00307AED 1 2SD2621 PC  Ta 120 45 Ta = 25°C IB = 100 µA 40 100 IC  VCE Collector-emitter saturation voltage VCE(sat) (V) 90 µA 80 µA 70 µA 60 µA 50 µA 40 µA 30 µA 20 15 10 10 µA 5 20 µA 1 ...


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