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2SD2604

Toshiba Semiconductor
Part Number 2SD2604
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 2SD2604 High-Power Switching Applications Ham...
Datasheet PDF File 2SD2604 PDF File

2SD2604
2SD2604

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.
5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 95 V Collector-emitter voltage VCEO 110 ± 15 V Emitter-base voltage VEBO 5 V Collector current DC Pulse IC 5 A ICP 10 Base current IB 0.
7 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 20 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD2604 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 90 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 3 V, IC = 2 A VCE = 3 V, IC = 5 A IC = 2 A, IB = 4 mA IC = 2 A, IB = 4 mA Min ― 0.
75 95 2000 1000 ― ― Typ.
Max ― 100 ― 3.
0 110 125 ― 15000 ―― 0.
9 1.
5 1.
5 2.
5 Unit μA μA V V V Turn-on time Switching tim...


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