|
Part Number
|
FDT86256 |
|
Manufacturer
|
Fairchild Semiconductor |
|
Description
|
MOSFET |
|
Published
|
Jan 11, 2017 |
|
Detailed Description
|
FDT86256 N-Channel PowerTrench® MOSFET
FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.2 A, 845 mΩ Features
Max rDS(o...
|
|
Datasheet
|
FDT86256
|
Overview
FDT86256 N-Channel PowerTrench® MOSFET
FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.
2 A, 845 mΩ Features
Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.
2 A
Max rDS(on) = 1280 mΩ at VGS = 6.
0 V, ID = 1.
0 A
Very low Qg and Qgd compared to competing trench technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
Fast switching speed 100% UIL Tested RoHS Compliant
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
SOT-223
S D G
D GDS...
Similar Datasheet