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FDT86256

Fairchild Semiconductor
Part Number FDT86256
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(o...
Datasheet PDF File FDT86256 PDF File

FDT86256
FDT86256

Overview
FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.
2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.
2 A „ Max rDS(on) = 1280 mΩ at VGS = 6.
0 V, ID = 1.
0 A „ Very low Qg and Qgd compared to competing trench technologies August 2011 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
„ Fast switching speed „ 100% UIL Tested „ RoHS Compliant Applications „ DC-DC conversion „ Inverter „ Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 ...


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