MOSFET
FDMS3664S PowerTrench® Power Stage FDMS3664S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ...
Fairchild Semiconductor