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FDMS3669S

Fairchild Semiconductor
Part Number FDMS3669S
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-C...
Datasheet PDF File FDMS3669S PDF File

FDMS3669S
FDMS3669S


Overview
FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 14.
5 mΩ at VGS = 4.
5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.
2 mΩ at VGS = 4.
5 V, ID = 17 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant January 2013 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE Pin 1 P...


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