FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 14.
5 mΩ at VGS = 4.
5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.
2 mΩ at VGS = 4.
5 V, ID = 17 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant January 2013 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connect...

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