Part Number
|
PE600SA |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 4, 2017 |
Detailed Description
|
PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 25A
PDFN 3X3P
A...
|
Datasheet
|
PE600SA
|
Overview
PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
30
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
19 11
Pulsed Drain Current1
TA= 70 °C
IDM
9.
3 80
Avalanche Current
IAS 21
Avalanche Energy
L =0.
1mH
EAS
22
TC = 25 °C
20
Power Dissipation4
TC = 100 °C TA = 25 °C
PD
8.
3 3.
1
TA = 70 °C
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
...
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