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PE6004

semi one
Part Number PE6004
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6004 uses advanced trench technology to provide excellent RDS(...
Datasheet PDF File PE6004 PDF File

PE6004
PE6004

Overview
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS =60V,ID =4A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery Switch ●DC/DC Converter PE6004 D G S Schematic diagram SOT-223 -3L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 60 ±20 4 10 1.
7 -55 To 150 73.
5 Unit V V A ...


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