Part Number
|
P3506DT |
Manufacturer
|
UNIKC |
Description
|
P-Channel MOSFET |
Published
|
Feb 9, 2017 |
Detailed Description
|
P3506DT
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ @VGS = 10V
ID -40A
TO-220
A...
|
Datasheet
|
P3506DT
|
Overview
P3506DT
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ @VGS = 10V
ID -40A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
-40 -25 -150
Avalanche Current Avalanche Energy2
L = 0.
1mH
IAS EAS
-40 80
Power Dissipation
TC = 25 °C TC = 100 °C
PD
104 41
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum juncti...
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