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P3506DD

UNIKC
Part Number P3506DD
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 2, 2017
Detailed Description P3506DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = -10V ID -26A TO-252 ...
Datasheet PDF File P3506DD PDF File

P3506DD
P3506DD

Overview
P3506DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = -10V ID -26A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -26 -16 -100 Avalanche Current Avalanche Energy2 L = 0.
1mH IAS EAS -39 77 Power Dissipation TC = 25 °C TC = 100 °C PD 42 17 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2VDD = -30V Starting TJ = 25°C.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 50 UNITS °C / W Ver 1.
1 1 2013-3-22 P3506DD P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX ...


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