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P3506DD

NIKO-SEM
Part Number P3506DD
Manufacturer NIKO-SEM
Description P-Channel Transistor
Published Feb 2, 2017
Detailed Description NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PROD...
Datasheet PDF File P3506DD PDF File

P3506DD
P3506DD

Overview
NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ ID -26A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy 2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.
1mH Tc = 25 °C Tc = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1.
GATE 2.
DRAIN 3.
SOURCE LIMITS -60 ±20 -26 -16 -100 -39 77 42 17 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJc Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature.
2VDD = -30V .
Starting TJ = 25˚C.
TYPICAL MAXIMUM 3 50 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CON...


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