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P3506DT

NIKO-SEM
Part Number P3506DT
Manufacturer NIKO-SEM
Description P-Channel Transistor
Published Feb 1, 2017
Detailed Description NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PROD...
Datasheet PDF File P3506DT PDF File

P3506DT
P3506DT

Overview
NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ ID -40A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy 2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.
1mH Tc = 25 °C Tc = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1.
GATE 2.
DRAIN 3.
SOURCE LIMITS -60 ±20 -40 -25 -150 -40 80 104 41 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJc Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature.
2VDD = -30V .
Starting TJ = 25˚C.
TYPICAL MAXIMUM 1.
2 40 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST ...


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