MSN7004F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =4A RDS(ON) 2.
3 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transformer PIN Configuration Marking and pin assignment TO-220F top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN7004F MSN7004F TO-220F Reel ...

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