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MSN7002D

MORESEMI
Part Number MSN7002D
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Published Mar 13, 2017
Detailed Description MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=1...
Datasheet PDF File MSN7002D PDF File

MSN7002D
MSN7002D

Overview
MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.
5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transformer PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN7002D MSN7002D TO-252 Reel Size - Tape width - Quantity 2500PCS Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current Maximum P...


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