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MSN7002F

MORESEMI
Part Number MSN7002F
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Published Mar 13, 2017
Detailed Description MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=1...
Datasheet PDF File MSN7002F PDF File

MSN7002F
MSN7002F

Overview
MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.
5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transformer PIN Configuration Marking and pin assignment TO-220F top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN7002F MSN7002F TO-220F Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power ...


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