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MSN7002E

MORESEMI
Part Number MSN7002E
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Published Mar 13, 2017
Detailed Description MSN7002E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5...
Datasheet PDF File MSN7002E PDF File

MSN7002E
MSN7002E

Overview
MSN7002E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.
3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc.
●Battery operated systems ●Solid-state relays PIN Configuration Marking and pin assignment SOT-23 top view Schematic diagram Package Marking And Ordering Information Device Marking Device MSN7002E Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ =150℃) Drain Current-Pulsed (Note 1) TA =25℃ TA =100℃ Maximum Power Dissipation Operating Junction an...


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