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Part Number
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WFF8N60B |
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Manufacturer
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Winsemi |
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Description
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Silicon N-Channel MOSFET |
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Published
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Mar 21, 2017 |
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Detailed Description
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WFF8N60B Product Description
Silicon N-Channel MOSFET
Features
� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate ch...
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Datasheet
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WFF8N60B
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Overview
WFF8N60B Product Description
Silicon N-Channel MOSFET
Features
� 7.
5A,600V,RDS(on)(Max1.
2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
...
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