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WFF8N60

WINSEMI SEMICONDUCTOR
Part Number WFF8N60
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in WFF8N60 Silicon N-Channel MOSFET Features � � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gat...
Datasheet PDF File WFF8N60 PDF File

WFF8N60
WFF8N60

Overview
www.
DataSheet.
in WFF8N60 Silicon N-Channel MOSFET Features � � � � � � 7.
5A,600V,RDS(on)(Max1.
2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 7.
5* 4.
3* 30 ±30 240 15 4.
5 48 0.
38 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.
6 62.
5 Units ℃/W ℃/W Rev.
A Aug.
2010 Copyright@WinSemi Semiconductor Co.
, Ltd.
, All right reserved.
www.
DataSheet.
in WFF8N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type 0.
8 8.
7 1100 135 16 30 80 65 60 28 7 14.
5 Max ±100 10 100 4 1.
2 1430 175 21 70 170 Unit nA V µA µA V V Ω S Drain cut -off current IDSS VDS=480V,Tc=125℃ Drain -source breakdown voltage Gate thres...


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