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WFF8N65L

Winsemi
Part Number WFF8N65L
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFF8N65L Product Description Silicon N-Channel MOSFET Features � 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V � Ultra-low Gate cha...
Datasheet PDF File WFF8N65L PDF File

WFF8N65L
WFF8N65L

Overview
WFF8N65L Product Description Silicon N-Channel MOSFET Features � 7.
5A,650V,RDS(on)(Max1.
4Ω)@VGS=10V � Ultra-low Gate charge(Typical 24nC) � Fast Switching Capability � 100%Avalanche Tested � Enhanced EMI capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-CellTM planar high pressure VDMOS process technology.
this product have lower resistance,Superior switching performance and high EAS capability.
The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive.
D G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ TJ,Tstg Junction and Stor...


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