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WFF8N60C

Winsemi
Part Number WFF8N60C
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFF8N60C Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate cha...
Datasheet PDF File WFF8N60C PDF File

WFF8N60C
WFF8N60C

Overview
WFF8N60C Product Description Silicon N-Channel MOSFET Features � 7.
5A,600V,RDS(on)(Max1.
2Ω)@VGS=10V � Ultra-low Gate charge(Typical 54nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total P...


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