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WPMD2008

MOSFET

Description

WPMD2008 Dual P-Channel, -20 V, - 4 .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features 9 %5 '66 í20 V 5'6 RQ 0$; 110m¡@ í4.5V 138m¡@ í2.5V WPMD2008 Http://ww...


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