MOSFET
WPMD2008 Dual P-Channel, -20 V, - 4 .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features 9%5'66 í20 V 5'6RQ 0$; 110m¡@ í4.5V 138m¡@ í2.5V WPMD2008 Http://ww...
WillSEMI