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WPMD2012

WillSEMI
Part Number WPMD2012
Manufacturer WillSEMI
Description MOSFET
Published Apr 30, 2017
Detailed Description WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V ...
Datasheet PDF File WPMD2012 PDF File

WPMD2012
WPMD2012


Overview
WPMD2012 Dual P-Channel, -20V, -0.
64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.
550@ VGS=-4.
5V 0.
740@ VGS=-2.
5V 0.
910@ VGS=-1.
8V Descriptions The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
Standard Product WPMD2012 is Pb-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www.
willsemi.
com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 12* 1 23 12 = Device Code * = Month (A~Z) Marking Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Order information Device Package Shipping WPMD2012-6/TR SOT-363 3000/Reel&Tape Will Semiconductor Ltd.
1 Dec,2011 - Rev.
1.
4 Absolute Maximum ratings Parameter Drain-S...


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