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WPMD2011

WillSEMI
Part Number WPMD2011
Manufacturer WillSEMI
Description MOSFET
Published Apr 30, 2017
Detailed Description WPMD2011 Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET V(BR)DSS -20 Rds(on) (Ÿ) 0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1...
Datasheet PDF File WPMD2011 PDF File

WPMD2011
WPMD2011

Overview
WPMD2011 Dual P-Channel -20V, -4.
4A, 52mȍ Power MOSFET V(BR)DSS -20 Rds(on) (Ÿ) 0.
052 @ -4.
5V 0.
064 @ -2.
5V 0.
080 @ -1.
8V 0.
090 @ -1.
5V Description The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WPMD2011 is Pb-free.
Features WPMD2011 Http://www.
willsemi.
com DFN2x2-6L S1 1 G1 2 D1 6 D1 5 G2 D2 3 D2 4 S2 Pin Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for highest DC current z Extremely low threshold voltage z Bidirectional current flow with common source configuration z DFN2x2 package provides exposed drain pad for excellent thermal conduction WLSI GYWW WLSI G Y WW = Company Code = Device Code = Year (last digit) = Week Applications Order Information z Driver for Relay, Solenoid, Motor, LED et...


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