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WPMD2010

WillSEMI
Part Number WPMD2010
Manufacturer WillSEMI
Description MOSFET
Published Apr 30, 2017
Detailed Description WPMD2010 Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design...
Datasheet PDF File WPMD2010 PDF File

WPMD2010
WPMD2010

Overview
WPMD2010 Dual P-Channel, -20 V, -3.
6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion applications.
Standard Product WPMD2010 is Pb-free.
Features V(BR)DSS −20 V RDS(on) Typ 75mΩ@ −4.
5V 101mΩ@ −2.
5V z Lower RDS(on) Solution in 2x2 mm Package z 1.
8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.
8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction Application z Optimized for Battery and Load Management Applications in Portable Equipment z Li−Ion Battery Charging and Protection Circuits z High Power Management in Portable, Battery Powered Products z High Side Load Switch　　 Order information Part Number WPMD2010-6/TR Package DFN 6 Will Semiconductor Page 1 WPMD2010 Http://www.
willsemi.
com PIN CONNECTIONS MARKING DIAGRAM WLSI FYWW F = Specific Device Code YWW = Date Code Shipping 3000Tape&Reel Dec,2011 Rev.
1.
1 WPMD2010 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Maximum Power Dissipation a TA=25°C TA=70°C TA=25°C TA=70°C Continuous Drain Current (TJ = 150 °C)b TA=25°C TA=70°C Maximum Power Dissipation b Pulsed Drain Current c TA=25°C TA=70°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID PD ID PD IDM TJ, Tstg 10 S −3.
6 −2.
9 2.
0 1.
3 −2.
3 −1.
8 0.
8 0.
5 Steady State -20 ±12 −3.
1 −2.
7 1.
5 1.
0 − 2.
1 −1.
7 0.
7 0.
4 -18 -55 to 150 Unit V A W A W A °C THERMAL RESISTANCE RATINGS Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Dual operation Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-C...


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