Power
Transistor
Description:
PNP silicon power
transistor in a TO-3 package.
Designed for medium-speed switching and amplifier applications.
Features:
• Excellent Safe Operating Areas • hFE (Min) 25 and 50 @ IC = 1A
PNP
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Continuous Total Device Dissipation at Tc = 25°C Derate above 25°C Operating Junction Temperature Range
Symbol VCEO VCBO VEBO IC IB
PD
Tj
Rating
Unit
80
80 V
7
10 A
4
150 0.
857
W mW/°C
-65 to +200 °C
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter OFF Characteristics Collector - Emitter...