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2N3700

Part Number	2N3700
Manufacturer	TT
Description	SILICON NPN TRANSISTOR
Published	May 16, 2017
Detailed Description	SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package ...
Datasheet	2N3700 PDF File

Overview

SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7.
0V IC Continuous Collector Current 1.
0A PD Total Power Dissipation at TA = 25°C 0.
5W Derate Above TA = 25°C 2.
9mW/°C TC = 25°C 1.
0W Derate Above TC = 25°C 5.
7mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min.
Typ.
Max.
350 175 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is be...

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