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2N3700

Part Number	2N3700
Manufacturer	ON Semiconductor
Description	Low Power Transistor
Published	May 16, 2017
Detailed Description	2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JAN...
Datasheet	2N3700 PDF File

Overview

2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.
0 Collector Current − Continuous IC 1.
0 Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT W 5.
0 1.
0 Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 RqJA °C/W 195 325 Thermal Resistance, Junction to Case 2N3019, 2N3019S 2N3700 RqJC °C/W 30 150 Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.
com COLLECTOR 3 2 BASE 1 EMITTER TO−5 CASE 205AA STYLE 1 2N3019 TO−39 CASE 205AB STYLE 1 2N3019S TO−18 CASE 206AA STYLE 1 2N3700 ORDERING INFORMATION Device Package Shipping JAN2N3019 JANTX2N3019 TO−5 Bulk JANTXV2N3019 JAN2N3019S JANTX2N3019S TO−39 Bulk JANTXV2N3019S JAN2N3700 JANTX2N3700 TO−18 Bulk JANTXV2N3700 © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev.
2 1 Publication Order Number: 2N3019/D 2N3019, 2N3019S, 2N3700 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 30 mAdc) Emitter−Base Cutoff Current (VEB = 5.
0 Vdc) (VEB = 7.
0 Vdc) Collector−Emitter Cutoff Current (VCE = 90 Vdc) Collector−Base Cutoff Current (VCB = 140 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.
1 mAdc, VCE = 10 Vdc) (IC = 10 mAd...

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