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2N3700

Comset Semiconductor
Part Number 2N3700
Manufacturer Comset Semiconductor
Description Silicon Planar Epitaxial Transistors
Published Nov 30, 2012
Detailed Description NPN 2N3700 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3700 are NPN transistors mounted in TO-18 metal package with the c...
Datasheet PDF File 2N3700 PDF File

2N3700
2N3700

Overview
NPN 2N3700 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector connected to the case .
They are intended for small signal, low noise industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ Tamb = 25° Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° www.
DataSheet.
net/ Value 80 140 7 1 0.
5 1.
8 1 200 -65 to +200 Unit V V V A W °C °C @ Tcase<100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 350 97 Unit °C/ W °C/ W 17/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ NPN 2N3700 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO (*) VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=90 V, IE=0V VCB=90 V, IE=0V, Tj=150°C VBE=5.
0 V, IC=0 IC=30 mA, IB=0 IC=100 µA, IE=0 IE=100 µA, IC=0 IC=0.
1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V IC=1A, VCE=10 V IC=150 mA, VCE=10 V Tamb = -55° IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA www.
DataSheet.
net/ Min 80 140 7 50 90 100 50 15 40 80 25 Typ 100 12 60 - Max 10 10 10 300 0.
2 0.
5 1.
1 400 400 Unit nA µA nA V V V hFE (*) DC Current Gain - Collector-Emitter saturation Voltage Base-Emitter saturation VBE(SAT) (*) Voltage VCE(SAT) (*) fT hfe CCBO CEBO rbb’,Cb’c Transition frequency Small signal current gain Collector-Base Capacitance Emitter-Base Capacitance Feedback time constant V IC=150 mA, IB=15 mA IC=50 mA, VCE=10 V f= 20MHz IC=1 mA, VCE=5.
0 V f= 1 KHz IE= 0 ,VCB=10 V f = 1MHz IC= 0 ,VEB=0.
5 V f = 1MHz IC=10 mA, VCE=10 V f= 4 MHz MHz ...


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