TECHNICAL DATA
PNP HIGH POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/379
Devices
2N3791
2N3792
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current Total Power Dissipation
@ TA = +250C (1) @ TC = +1000C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IB IC
PT TJ, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly @ 28.
57 mW/0C for TA +250C
2) Derate linearly @ 0.
857 mW/0C for TC +1000C
2N3791 2N3792 60 80 60 80 7.
0 4.
0 10 5.
0 85.
7 -65 to +200
Max.
1.
17
ELECTRICAL CHAR...