SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
• High Voltage • Hermetic TO-18 Metal package.
• Ideally suited for High Voltage Amplifier
and Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
200V
VCEO
Collector – Emitter Voltage
200V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
500mA
PD Total Power Dissipation at TA = 25°C
500mW
Derate Above 25°C
2.
86mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
Max.
350
Units °C/W
Semelab L...