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BSS100

Fairchild Semiconductor
Part Number BSS100
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These...
Datasheet PDF File BSS100 PDF File

BSS100
BSS100

Overview
September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
Features BSS100: 0.
22A, 100V.
RDS(ON) = 6Ω @ VGS = 10V.
BSS123: 0.
17A, 100V.
RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
_______________________________________________________________________________ D G BSS100 BSS123 S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS100 BSS123 Units VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage - Continuous - Non Repetitive (TP < 50 µS) 100 100 ± 14 ± 20 0.
22 0.
9 0.
63 -55 to 150 300 0.
17 0.
68 0.
36 V V V ID PD TJ,TSTG TL Drain Current - Continuous - Pulsed Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal Resistacne, Junction-to-Ambient A W °C °C THERMAL CHARACTERISTICS RθJA 200 350 °C/W © 1997 Fairchild Semiconductor Corporation BSS100 Rev.
F1 / BSS123 Rev.
F1 Electrical Characteristics (T Symbol Parameter OFF CHARACTERISTICS A = 25°C unless otherwise noted) Conditions Type Min Typ Max Units BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V VDS = 60 V, VGS = 0 V VDS = 20 V, VGS = 0 V TJ=125 C o All BSS100 BSS123 100 15 1 60 10 10 10 50...


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