| Part Number | 2SA1703 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-92LM PNP 。Silicon PNP transistor in a TO-92LM Plastic Package. / Features 。 Low VCE(sat). / Applications ，。 Low frequency amplifier, el... |
| Features |
。 Low VCE(sat).
/ Applications ，。 Low frequency amplifier, electronic governor applications.
/ Equivalent Circuit
/ Pinning
123
PIN1：Base
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking
hFE Classifications Symbol hFE Range
R 100~200
S 140~280
T 200~400
http://www.fsbre...
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| File Size | 851.86KB |
| Datasheet |
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2SA1700 : ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.4 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1700.
2SA1700 : .
2SA1700 : TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features ，， MBIT 。 High breakdown voltage, adoption of MBIT process excellent hFE linearity / Applications 。 High voltage driver applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60～120 E 100～200 http://www.fsbrec.com 1/6 2SA1700 Rev.E May.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Collector Power Dissipa.
2SA1700 : 1.BASE 2.COLLECTOR 3.EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless TO-252-2L Dimensions in inches and (millimeters) otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base b.
2SA1700 : PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage -400 -400 V V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA ICP Collector Power Dissipation -400 mA PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)005 Rev.A www.gmicroelec.com 1 PNP Epitaxial Planar Silicon Transistor Production specification 2.
2SA1700 : UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-252 Pin Assignment 123 BCE BCE Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R213-011.C 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base .
2SA1701 : Ordering number:EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications · AF power amplifier, medium-speed switching, smallsized motor driver applications. Features · Large current capacity. · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1701/2SC4481] ( ) : 2SA1701 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Charact.
2SA1702 : .
2SA1703 : Ordering number:EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1703/2SC4483] ( ) : 2SA1703 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Curren.
2SA1704 : www.DataSheet4U.com Ordering number:EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications · Voltage regulators, relay drivers. lamp drivers. Package Dimensions unit:mm 2064 [2SA1704/2SC4484] Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter voltage. · Large current capacity and wide ASO. · Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage .
2SA1705 : Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications · Voltage regulators, relay drivers, lamp drivers. Features · Adoption of FBET process. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Curren.
2SA1705 : Ordering number : EN3025A 2SA1705 Bipolar Transistor -50V, -1A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET process • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --5 --1 --2 0.9 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are st.
2SA1706 : Ordering number:EN3026 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1706/2SC4486] ( ) : 2SA1706 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Condi.
2SA1706 : Ordering number : EN3026B 2SA1706 Bipolar Transistor –50V, –2A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --6 --2 --4 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings m.
2SA1707 : Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1707/2SC4487] ( ) : 2SA1707 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Sy.
2SA1707 : Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)60 (--)50 (--)6 (--)3 (--)6 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding.