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2SA1700

Part Number	2SA1700
Manufacturer	GME
Description	PNP Epitaxial Planar Silicon Transistor
Published	Sep 2, 2017
Detailed Description	PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE ...
Datasheet	2SA1700 PDF File

Overview

PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage.
z Adoption of MBIT process.
z Excellent hFE linearity.
Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage -400 -400 V V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA ICP Collector Power Dissipation -400 mA PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)005 Rev.
A www.
gmicroelec.
com 1 PNP Epitaxial Planar Silicon Transistor Production specification 2SA1700 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage VCEO Emitter-base breakdown voltage VEBO Collector cut-off current ICBO Emitter cut-off cur...

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