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2SA1700

Part Number	2SA1700
Manufacturer	LGE
Description	PNP Transistor
Published	Sep 2, 2017
Detailed Description	1.BASE 2.COLLECTOR 3.EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features High breakdown voltage Ado...
Datasheet	2SA1700 PDF File

Overview

1.
BASE 2.
COLLECTOR 3.
EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.
2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless TO-252-2L Dimensions in inches and (millimeters) otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-10µA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA,IB=0 -400 V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO IE=-10µA,IC=0 VCB=-300V,IE=0 VEB=-4V,IC=0 -5 V -0.
1 µA -0.
1 µ...

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