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2SA1700

INCHANGE
Part Number 2SA1700
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Po...
Datasheet PDF File 2SA1700 PDF File

2SA1700
2SA1700

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -0.
4 A 10 W 1.
0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1700 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -50mA; IB= -5mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 ICBO Collector Cutoff Current VCB= -300V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -50mA; VCE= -10V fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -30V  hFE Classifications D E 60-120 100-200 2SA1700 MIN TYP.
MAX UNIT -0.
8 V 1.
0 V -400 V -5 V -0.
1 μA -0.
1 μA 60 200 70 MHz isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Outline Drawing 2SA1700 isc website：www.
iscsemi.
com 3 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1700 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC ...


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