Power
Transistor
FEATURES
z Low VCE(sat).
VCE(sat)=0.
5V(Typ.
) (IC/IB=2A/0.
2A)
z Complements the 2SB1184.
APPLICATIONS
z Epitaxial planar type.
z
NPN silicon
transistor.
Pb
Lead-free
Production specification
2SD1864
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
3A
ICP Collector Current(Pulse)
4.
5 A
IB Base Current
1A
PC Collector Power Dissipation
1.
5 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V040 Rev.
A
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Production specification
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