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2SD1801

Inchange Semiconductor
Part Number 2SD1801
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 17, 2016
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 DESCRIPTION ·Large current capacitance and wide ASO ·S...
Datasheet PDF File 2SD1801 PDF File

2SD1801
2SD1801


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 15 W 0.
8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE1 DC Current Gain IC= 0.
1A; VCE= 2V hFE2 DC Current Gain IC= 1.
5A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.
0MHz fT Current-Gain—Bandwidth Product IC=50mA; VCE= 10V MIN TYP.
MAX UNIT 0.
4 V 1.
2 V 60 V 50 V 6 V 100 nA 100 nA 100 560 40 12 pF 150 MHz  hFE1 Classifications R S T U 100-200 140-280 200-400 280-560 isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Outline Drawing INCHANGE S...


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