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2SD1802

Part Number	2SD1802
Manufacturer	GME
Description	NPN Epitaxial Planar Silicon Transistors
Published	May 17, 2018
Detailed Description	Production specification NPN Epitaxial Planar Silicon Transistors 2SD1802 FEATURES  Adoption of FBET,MBIT processes...
Datasheet	2SD1802 PDF File

Overview

Production specification NPN Epitaxial Planar Silicon Transistors 2SD1802 FEATURES  Adoption of FBET,MBIT processes.
Pb  Large current capacity and wide ASO.
Lead-free  Low collector-to-emitter saturation voltage.
 Fast switching speed.
 Small and slim package making it easy to Make 2SB1802-used sets smaller.
APPLICATIONS  High-Current Switching Applications.
 Voltage regulators,relay drivers,lamp drivers, Electrical equipment.
TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current 3A ICP Collector Power Dissipation 6A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)018 Rev.
A www.
gmesemi.
com 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1802 ELECTRICAL CHARACTER...

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