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2SD1802

Inchange Semiconductor
Part Number 2SD1802
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 17, 2016
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·S...
Datasheet PDF File 2SD1802 PDF File

2SD1802
2SD1802

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 15 W 1.
0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE1 DC Current Gain IC= 0.
1A; VCE= 2V hFE2 DC Current Gain IC= 3A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.
0MHz fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V MIN TYP.
MAX UNIT 0.
5 V 1.
2 V 60 V 50 V 6 V 1 uA 1 uA 100 560 35 25 pF 150 MHz  hFE1 Classifications R S T U 100-200 140-280 200-400 280-560 isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Outline Drawing INCHANGE Se...


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