NPN Epitaxial Planar Silicon
Transistors
FEATURES
z High hFE hFE=100 to 400.
z Low VCE(sat0 VCE(sat)≤0.
3V.
Pb
Lead-free
Production specification
2SD1899
ORDERING INFORMATION
Type No.
Marking
2SD1899
1899
SOT-89
Package Code SOT-89
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC ICP IB PC
Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base current Collector Power Dissipation
Tj ,Tstg
Junction and Storage temperature range
Note1:Mounted on ceramic substrate(250mm2*0.
8t)
60
60
7 3 5 0.
5 0.
5 1.
3 Note1 -55 to +150
V V V A A A W
℃
E1...