Part Number
|
2SA1700 |
Manufacturer
|
LGE |
Description
|
PNP Transistor |
Published
|
Sep 2, 2017 |
Datasheet
|
2SA1700
|
Features
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter...
Similar Datasheet